features formerly brand extremely high speed performance blocks high voltages and currents very high bandwidth; ghz compatible small package, minimal pcb area simple, superior circuit protection rohs compliant*, ul recognized c650 and c850 series tbu ? high-speed protectors *rohs directive 2002/95/ec jan. 27, 2003 including annex and rohs recast 2011/65/eu june 8, 2011. speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications. transient blocking units - tbu ? devices bourns ? c650 and c850 series products are high-speed bidirectional protection components, constructed using mosfet semiconductor technology, designed to protect against faults caused by short circuits, ac power cross, induction and lightning surges. the tbu high-speed protector, triggering as a function of the mosfet, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. the tbu device is provided in a surface mount dfn package and meets industry standard requirements such as rohs and pb free solder re ow pro les. electrical characteristics (t amb = 25 ?) c650 and c850 tbu high-speed protectors are bidirectional; speci cations are valid in both directions. symbol parameter min. typ. max. unit i op maximum current through the device that will not cause current blocking cx50-100-wh cx50-180-wh cx50-260-wh 100 180 260 ma i trigger typical current for the device to go from normal operating state to protected state cx50-100-wh cx50-180-wh cx50-260-wh 150 220 330 ma i out maximum current through the device cx50-100-wh cx50-180-wh cx50-260-wh 200 360 520 ma r device series resistance of the tbu device c650-100-wh c650-180-wh c650-260-wh c850-100-wh c850-180-wh C850-260-WH 12 8 8 17 11 11 14.5 10 10 19 14 14 t block maximum time for the device to go from normal operating state to protected state 1 s i quiescent current through the triggered tbu device with 50 vdc circuit voltage 1ma v reset voltage below which the triggered tbu device will transition to normal operating state 14 v absolute maximum ratings (t amb = 25 ?) symbol parameter value unit v imp maximum protection voltage for impulse faults with rise time 1 ?ec c650-xxx-wh c850-xxx-wh 650 850 v v rms maximum protection voltage for continuous v rms faults c650-xxx-wh c850-xxx-wh 300 425 v t op operating temperature range -40 to +85 ? t stg storage temperature range -65 to +150 ? agency approval ul recognized component file # e315805. industry standards description model telcordia gr-1089 port type 1, 3, 5 c650 c850 gr-974 c650 c850 itu-t k.20, k.20e, k.21, k.21e, k.45 c850 *rohs compliant the c650 & c850 series are currently available, but not recommended for new designs. bourns ? tbu-ca series is preferred.
speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications. typical performance characteristics c650 and c850 series tbu ? high-speed protectors v-i characteristics time to block vs. fault current current vs. temperature -i trigger v reset -v reset i trigger +v +i 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 0.1 1 10 100 1000 fault current (a ) time to block (sec) 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 temperature (c) % of current applications combo voice / xdsl linecards voice linecards mdf, primary protection modules process control equipment test and measurement equipment general electronics
test configuration diagram v1 v2 load c650 and c850 series tbu ? high-speed protectors operational characteristics c650 lightning, 650 v c850 lightning, 850 v the graphs below demonstrate the operational characteristics of the tbu ? protector. for each graph the fault voltage, protected side voltage, and current is presented. c650 power fault, 300 vrms, 100 a c850 power fault, 425 vrms, 100 a 1 s/div. 100 v/div. 400 ma/div. ch1 v1 ch2 v2 ch3 current 1 3 2 1 s/div. 100 v/div. 400 ma/div. ch1 v1 ch2 v2 ch3 current 1 3 2 4 ms/div. 100 v/div. 200 ma/div. ch1 v1 ch2 v2 ch3 current 1 2 3 4 ms/div. 100 v/div. 200 ma/div. ch1 v1 ch2 v2 ch3 current 1 2 3 speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications.
c650 and c850 series tbu ? high-speed protectors product dimensions 321 pin 1 top view side view bottom view c a1 seating plane b d a h h k k f d j j e xxxxx ywwll dimensions: mm (inches) dim. min. typ. max. a 0.80 (.031) 0.90 (.035) 1.00 (.039) a1 0.00 (.000) 0.025 (.001) 0.050 (.002) b 8.15 (.321) 8.25 (.325) 8.35 (.329) c 3.90 (.154) 4.00 (.157) 4.10 (.161) d 2.55 (.100) 2.60 (.102) 2.65 (.104) e 1.10 (.043) 1.15 (.045) 1.20 (.047) f 3.45 (.136) 3.50 (.138) 3.55 (.140) h 0.20 (.008) 0.25 (.010) 0.30 (.012) j 0.65 (.026) 0.70 (.028) 0.75 (.030) k 0.20 (.008) 0.25 (.010) 0.30 (.012) recommended pad layout 3.55 (.140) 0.70 (.028) 1.15 (.045) 2.625 (.103) pad # apply 1 in/out 2n c 3 in/out nc = solder to pcb; do not make electrical connection, do not connect to ground. pad designation tbu protectors have matte-tin termination nish. suggested layout should use non-solder mask de ne (nsmd). recommended stencil thick- ness is 0.10-0.12 mm (.004-.005 in.) with stencil opening size 0.025 mm (.0010 in.) less than the device pad size. as when heat sinking any power device, it is recommended that, wherever possible, extra pc b copper area is allowed. for minim um parasitic capacitance, d o not allow any signal, ground or power signals beneath any of the pads of the device. thermal resistances symbol parameter value unit r th(j-a) junction to leads (package) 116 ?/w re ow pro le pro le feature pb-free assembly average ramp-up rate (tsmax to tp) 3 ?/sec. max. preheat - temperature min. (tsmin) - temperature max. (tsmax) - time (tsmin to tsmax) 150 ? 200 ? 60-180 sec. time maintained above: - temperature (tl) - time (tl) 217 ? 60-150 sec. peak/classi cation temperature (tp) 260 ? time within 5 ? of actual peak temp. (tp) 20-40 sec. ramp-down rate 6 ?/sec. max. time 25 ? to peak temperature 8 min. max. speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications.
c650 and c850 series tbu ? high-speed protectors typical part marking how to order c 650 - 180 - wh form factor c = one tbu protector in the device impulse voltage rating 650 = 650 v 850 = 850 v iop indicator 100 = 100 ma 180 = 180 ma 260 = 260 ma packaging speci cations (per eia468-b) b a d c n f g (measured at hub) user direction of feed k 0 b 0 p 2 d 1 center lines of cavity embossment t d p 0 top cover tape e w p a 0 dimensions: mm (inches) device a b c d g n min. max. min. max. min. max. min. max. ref. ref. c650, c850 326 (12.835) 330.25 (13.002) 1.5 (.059) 2.5 (.098) 12.8 (.504) 13.5 (.531) 20.2 (.795) - 16.5 (.650) 102 (4.016) device a 0 b 0 d d 1 e f min. max. min. max. min. max. min. max. min. max. min. max. c650, c850 4.2 (.165) 4.4 (.173) 8.45 (.333) 8.65 (.341) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) 1.85 (.073) 7.4 (.291) 7.6 (.299) device k 0 p p 0 p 2 t w min. max. min. max. min. max. min. max. min. max. min. max. c650, c850 1.1 (.043) 1.3 (.051) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 15.7 (.618) 16.3 (.642) quantity: 3000 pieces per reel speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications. pin 1 manufacturer?s trademark 5 digit product code: ? 1st alpha character indicates product family. c = c650/c850 series ? 2nd & 3rd digits indicate impulse voltage. ? 4th & 5th digits indicate trigger current. manufacturing date code: ? 1st digit indicates the year. ? 2nd & 3rd digits indicate the week number. ? 4th & 5th digits indicate lot code. xxxxx ywwll
c650 and c850 series tbu ? high-speed protectors reference application the c-series devices are general protectors that can be used in a variety of applications. the basic operation of the device will be demonstrated using the single line application shown in the gure below. the test circuit was subjected to a 1000 v, 10/700 ? surge waveform. the devices used were the tbu-c850-100-wh and a 2031-42t-sm-rplf gdt (ovp) with a 10 ohm resistor for the load impedance. the graph below shows the waveforms for the voltage across the overvoltage protector (gdt) and the current through the tbu device. as the input line voltage increases, the current through the tbu device increases rapidly until the trip current is reached. due to nite reaction time for fast transients, the peak level may exceed the low frequency data sheet maximum for a very short period , typically ~100 ns. after this initial overshoot, the tbu device will transition to the protected state, setting the current to the nominal current limiting level (~150 ma for this example). the tbu device will then reduce the current down it to its very low quiescent level of 1 ma, typically. as the input line voltage increases to about 500 v, the gdt is triggered, reducing the input line voltage t o a very low level which prevents the tbu device from being subjected to a voltage level which exceeds its maximum rating (850 v in this example). the tbu high-speed orotector and the gdt will remain in these states until the surge ends, which is about 700 ? later in this example. only the rst 4 ? of the surge are shown in the graph. for surges or ac voltages below the gdt breakover vo ltage, the gdt will not activate, and the tbu device will stay in the protecting mode, blocking high voltages from the protected equipment. general application circuit ?tbu? is a registered trademark of bourns, inc. in the united states and other countries. rev. 09/15 z load line tbu ? device ovp 1000 800 600 400 200 0 -200 -400 -600 -800 -1000 900 800 700 600 500 400 300 200 100 0 100 0 0.5 1 1.5 2 2.5 3 3.5 4 time (s) voltage across gdt (v) tbu ? device current (ma) gdt voltage tbu ? device current tbu-c850-100-wh response to a 1000 v, 10/700 s surge speci? cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci? c applications.
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